First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz
نویسندگان
چکیده
منابع مشابه
A 3-10 GHZ LCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs
We report a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates, as the active devices. The circuit topology used novel LCRmatching networks in a 4-way binaryWilkinson combiner structure. The devices were flip-chip bonded onto the AlN circuit for thermal management. Using devices with 0.7-pm gate length and 4-mm gate width, a small-signal gain of 7 dB was obt...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: 2168-6734
DOI: 10.1109/jeds.2020.3042050